Primary defect transformations in high-resistivity p-type silicon irradiated with electrons at cryogenic temperatures

✍ Scribed by L.F. Makarenko; S.B. Lastovski; F.P. Korshunov; L.I. Murin; M. Moll

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 259 KB
• Volume: 404
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2009.08.101

✦ Synopsis

It has been revealed that self-interstitials formed under low intensity electron irradiation in high resistivity p-type silicon can be retained frozen up to room temperature. Low thermal mobility of the self-interstitials suggests that Frenkel pairs in silicon can be stable at temperatures of about or higher than 100 K. A broad DLTS peak with activation energy of 0.14-0.17 eV can be identified as related to Frenkel pairs. This peak anneals out at temperatures of 120À140 K. Experimental evidences are presented that becoming more mobile under forward current injection the self-interstitials change their charge state to a less positive one.