Defect production in heavily doped n-Si irradiated with fast electrons at cryogenic temperatures

Primary defect transformations in high-r

Primary defect transformations in high-resistivity p-type silicon irradiated with electrons at cryogenic temperatures

✍ L.F. Makarenko; S.B. Lastovski; F.P. Korshunov; L.I. Murin; M. Moll 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 259 KB

It has been revealed that self-interstitials formed under low intensity electron irradiation in high resistivity p-type silicon can be retained frozen up to room temperature. Low thermal mobility of the self-interstitials suggests that Frenkel pairs in silicon can be stable at temperatures of about