๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

New defect states in irradiated p-type silicon

โœ Scribed by Kh.A. Abdullin; B.N. Mukashev; M.F. Tamendarov; T.B. Tashenov

Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
189 KB
Volume
144
Category
Article
ISSN
0375-9601

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Defect states in Czochalski p-type silic
Defect states in Czochalski p-type silicon: the role of oxygen and dislocations
โœ Castaldini, A. ;Cavalcoli, D. ;Cavallini, A. ;Pizzini, S. ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 190 KB

## Abstract This contribution reports the study, by junction spectroscopies, of electronic states induced by thermal and deformation treatments in pโ€type Si. In order to understand the role that oxygen precipitation, metallic contamination and plastic deformation play on the defect states, several

Primary defect transformations in high-r
Primary defect transformations in high-resistivity p-type silicon irradiated with electrons at cryogenic temperatures
โœ L.F. Makarenko; S.B. Lastovski; F.P. Korshunov; L.I. Murin; M. Moll ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 259 KB

It has been revealed that self-interstitials formed under low intensity electron irradiation in high resistivity p-type silicon can be retained frozen up to room temperature. Low thermal mobility of the self-interstitials suggests that Frenkel pairs in silicon can be stable at temperatures of about

Defect states in amorphous silicon
Defect states in amorphous silicon
โœ N. Ishii; M. Kumeda; T. Shimizu ๐Ÿ“‚ Article ๐Ÿ“… 1983 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 606 KB