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Properties of 1 MeV electron-irradiated defect centers in p-type silicon

โœ Scribed by Walker, J. W. ;Sah, C. T.


Publisher
John Wiley and Sons
Year
1972
Tongue
English
Weight
571 KB
Volume
11
Category
Article
ISSN
0031-8965

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Primary defect transformations in high-r
โœ L.F. Makarenko; S.B. Lastovski; F.P. Korshunov; L.I. Murin; M. Moll ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 259 KB

It has been revealed that self-interstitials formed under low intensity electron irradiation in high resistivity p-type silicon can be retained frozen up to room temperature. Low thermal mobility of the self-interstitials suggests that Frenkel pairs in silicon can be stable at temperatures of about