𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Oxygen precipitation in neutron-irradiated Czochralski silicon annealed at elevated temperature

✍ Scribed by Cui, Can ;Yang, Deren ;Ma, Xiangyang ;Fan, Ruixin ;Que, Duanlin

Book ID
105363362
Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
159 KB
Volume
202
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

The effects of vacancies introduced by neutron‐irradiation on oxygen precipitation at elevated temperatures in Czochralski (CZ) silicon have been investigated. In comparison with noirradiated CZ silicon, the neutron‐irradiated CZ silicon exhibits stronger oxygen precipitation at 1050 °C or 1150 °C due to the existence of supersaturated vacancies in the bulk. Moreover, it is proved that the oxygen out‐diffusion at high temperature is not enhanced by the supersaturated vacancies induced by neutron‐irradiation. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

📜 SIMILAR VOLUMES

Iron precipitation in as-received Czochr
Iron precipitation in as-received Czochralski silicon during low temperature annealing
✍ Yuheng Zeng; Deren Yang; Zhenqiang Xi; Weiyan Wang; Duanlin Que 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 336 KB

The iron precipitation in as-received Czochralski (CZ) silicon during low temperature from 300 to 700 1C was investigated. It was found that the iron precipitation rate was increased in turn from 300 to 700 1C. It was also found that the iron could form small precipitates even at low concentration.