Iron precipitation in as-received Czochralski silicon during low temperature annealing

✍ Scribed by Yuheng Zeng; Deren Yang; Zhenqiang Xi; Weiyan Wang; Duanlin Que

• Book ID: 104064309
• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 336 KB
• Volume: 12
• Category: Article
• ISSN: 1369-8001
• DOI: 10.1016/j.mssp.2009.10.002

✦ Synopsis

The iron precipitation in as-received Czochralski (CZ) silicon during low temperature from 300 to 700 1C was investigated. It was found that the iron precipitation rate was increased in turn from 300 to 700 1C. It was also found that the iron could form small precipitates even at low concentration. Moreover, iron precipitation was revealed as the diffusion-limited process, which could be described properly by Ham's law. This performance of iron precipitation in as-received CZ silicon was considered to be significantly influenced by the grown-in oxygen precipitates because of the fact that the grown-in oxygen precipitates could act as the heterogeneous nuclei for interstitial iron.