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Annealing behaviors of vacancy in varied neutron irradiated Czochralski silicon

✍ Scribed by Gui-feng CHEN; Yang-xian LI; Li-li LIU; Ping-juan NIU; Sheng-li NIU; Dong-feng CHEN

Book ID
117693062
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
291 KB
Volume
16
Category
Article
ISSN
1003-6326

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## Abstract The effects of vacancies introduced by neutron‐irradiation on oxygen precipitation at elevated temperatures in Czochralski (CZ) silicon have been investigated. In comparison with noirradiated CZ silicon, the neutron‐irradiated CZ silicon exhibits stronger oxygen precipitation at 1050 Β°C