Defects in nitrogen-doped multicrystalline silicon

✍ Scribed by Deren Yang; Dongsheng Li; M. Ghosh; H.J. Möller

• Book ID: 104080784
• Publisher: Elsevier Science
• Year: 2004
• Tongue: English
• Weight: 193 KB
• Volume: 344
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2003.10.027

✦ Synopsis

The cast multicrystalline silicon (mc-Si) grown by directional solidification in silicon nitride-coated silica crucibles has been investigated by means of the Fourier transmission infrared spectroscopy technique. An infrared absorption band at 1206 cm À1 was found in the specimens, which were located at the top center position of a mc-Si ingot. The defect was very stable during annealing up to 24 h in the temperature range 450-1150 C. The results of deep level transition spectroscopy experiments showed that no deep energy level was directly linked to the defect. The possible origin of the new defect and its influence on solar cells are discussed. This defect is suggested to be associated with the formation of boron-nitrogen complexes.