## Abstract The origin of the lower minority carrier lifetime in the border region of multicrystalline silicon (mc‐Si) ingots was investigated. Based on minority carrier lifetime measurements and chemical analyses, distributions of defects and impurities were studied. It is found that the content o
✦ LIBER ✦
Study of defects and impurities in multicrystalline silicon grown from metallurgical silicon feedstock
✍ Scribed by S. Binetti; J. Libal; M. Acciarri; M. Di Sabatino; H. Nordmark; E.J. Øvrelid; J.C. Walmsley; R. Holmestad
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 560 KB
- Volume
- 159-160
- Category
- Article
- ISSN
- 0921-5107
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