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Influence of extended defects and native impurities on external gettering in polycrystalline silicon

โœ Scribed by E. Ehret; V. Allais; J.-P. Vallard; A. Laugier

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
927 KB
Volume
34
Category
Article
ISSN
0921-5107

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## Abstract The origin of the lower minority carrier lifetime in the border region of multicrystalline silicon (mcโ€Si) ingots was investigated. Based on minority carrier lifetime measurements and chemical analyses, distributions of defects and impurities were studied. It is found that the content o