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Extended defects in nitrogen-doped Czochralski silicon during diode process

✍ Scribed by Jin Xu; Xiangyang Ma; Jinggang Lu; Chunlong Li; Deren Yang

Book ID
108238404
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
271 KB
Volume
348
Category
Article
ISSN
0921-4526

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## Abstract In this paper, the effects of vacancies introduced by rapid thermal processing (RTP) on nucleation and growth of oxide precipitates in Czochralski (Cz) silicon are elucidated. Moreover, the nitrogen and vacancy enhancement roles in oxide precipitation are differentiated through designin