Defect formation in manganese-doped III–V compounds
✍ Scribed by G. V. Semenova; T. P. Sushkova
- Book ID
- 110182788
- Publisher
- SP MAIK Nauka/Interperiodica
- Year
- 2010
- Tongue
- English
- Weight
- 276 KB
- Volume
- 55
- Category
- Article
- ISSN
- 0036-0236
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The deviation from stoichiometry or nonstoichiometry characterises a homogeneity range of chemical compounds. It is determined as the difference in the nonmetal-to metal atoms ratio between a real A n B mþd (d > o0) and stoichiometric A n B m composition. Nonstoichiometry creates defects which have
## Abstract A new class of defects characterized by inherent non‐exponential capture and emission processes was observed. A theory – based on the potential barrier model – is proposed to describe the measured DLTS and capacitance transient data. It is argued that these defects are related to disloc