## Abstract A new class of defects characterized by inherent nonβexponential capture and emission processes was observed. A theory β based on the potential barrier model β is proposed to describe the measured DLTS and capacitance transient data. It is argued that these defects are related to disloc
β¦ LIBER β¦
Defects in amorphous III-V compounds
β Scribed by Marie-Luce Theye; Adriana Gheorghiu
- Publisher
- Elsevier Science
- Year
- 1982
- Weight
- 568 KB
- Volume
- 8
- Category
- Article
- ISSN
- 0165-1633
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Extended defects in III-V semiconductor
β
Dr. G. Ferenczi; L. DΓ³zsa
π
Article
π
1981
π
John Wiley and Sons
π
English
β 315 KB
π 1 views
Nonstoichiometry and defects in IIIβV co
β
Vladimir P. Zlomanov
π
Article
π
2003
π
Elsevier Science
π
English
β 185 KB
The deviation from stoichiometry or nonstoichiometry characterises a homogeneity range of chemical compounds. It is determined as the difference in the nonmetal-to metal atoms ratio between a real A n B mΓΎd (d > o0) and stoichiometric A n B m composition. Nonstoichiometry creates defects which have
Optical properties of amorphous IIIβV co
β
J. Stuke; G. Zimmerer
π
Article
π
1972
π
John Wiley and Sons
π
English
β 572 KB
Optical properties of amorphous IIIβV co
β
B. Kramer; K. Maschke; P. Thomas
π
Article
π
1972
π
John Wiley and Sons
π
English
β 436 KB
Chemical trends for deep antisite defect
β
W. PΓΆtz; D.K. Ferry
π
Article
π
1985
π
Elsevier Science
π
English
β 773 KB
The Static Electronic Dielectric Constan
β
K. HΓΌbner
π
Article
π
1972
π
John Wiley and Sons
π
English
β 147 KB