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Chemical trends for deep antisite defect levels in III –V compounds

✍ Scribed by W. Pötz; D.K. Ferry


Publisher
Elsevier Science
Year
1985
Tongue
English
Weight
773 KB
Volume
46
Category
Article
ISSN
0022-3697

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Deep-level transient spectroscopy has been employed for monitoring grown-in point defects in vapour phase epitaxial GaAs06P0.4:Te and GaP:N,S. It is shown that the concentrations of deep electron traps T1 (0.20 eV) and T2 (0.18 eV) in GaA%.tP0.4:Te are dependent on the shallow donor concentration an