A mechanism for two-electron capture at deep level defects in semiconductors : N. T. Bagraev and V. A. Mashkov. Solid St. Commun.65, 1111 (1988)

• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 133 KB
• Volume: 29
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(89)90520-9