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A mechanism for two-electron capture at deep level defects in semiconductors

✍ Scribed by N.T. Bagraev; V.A. Mashkov

Publisher: Elsevier Science
Year: 1988
Tongue: English
Weight: 628 KB
Volume: 65
Category: Article
ISSN: 0038-1098
DOI: 10.1016/0038-1098(88)90904-0

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