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Extended defects in III-V semiconductor compounds

✍ Scribed by Dr. G. Ferenczi; L. Dózsa

Publisher: John Wiley and Sons
Year: 1981
Tongue: English
Weight: 315 KB
Volume: 16
Category: Article
ISSN: 0232-1300
DOI: 10.1002/crat.19810160214

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✦ Synopsis

Abstract

A new class of defects characterized by inherent non‐exponential capture and emission processes was observed. A theory – based on the potential barrier model – is proposed to describe the measured DLTS and capacitance transient data. It is argued that these defects are related to dislocations or dislocation generated lattice defects.

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