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Pores in III—V Semiconductors

✍ Scribed by Helmut Foell; Sergiu Langa; Juergen Carstensen; Marc Christophersen; Ion M. Tiginyanu


Publisher
John Wiley and Sons
Year
2003
Weight
72 KB
Volume
34
Category
Article
ISSN
0931-7597

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III—V Ferromagnetic Semiconductors
✍ F. Matsukura; H. Ohno; T. Dietl 📂 Article 📅 2003 🏛 John Wiley and Sons ⚖ 48 KB 👁 1 views

## Abstract For Abstract see ChemInform Abstract in Full Text.

Extended defects in III-V semiconductor
✍ Dr. G. Ferenczi; L. Dózsa 📂 Article 📅 1981 🏛 John Wiley and Sons 🌐 English ⚖ 315 KB

## Abstract A new class of defects characterized by inherent non‐exponential capture and emission processes was observed. A theory – based on the potential barrier model – is proposed to describe the measured DLTS and capacitance transient data. It is argued that these defects are related to disloc