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Wet Etching of III-V Semiconductors.

✍ Scribed by Walter P. Gomes


Publisher
John Wiley and Sons
Year
2010
Weight
23 KB
Volume
33
Category
Article
ISSN
0931-7597

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## Abstract For Abstract see ChemInform Abstract in Full Text.

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Optical in situ monitoring, exploiting the interference of monochromatic radiation reΓ‘ected from the surface being chemically etched and from the deeper interfaces of semiconductor layers, was utilized to monitor the etch process of layered AlGaAs/AlAs/GaAs structures. The described method is applic