𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Opticalin situ monitoring of wet chemical etching

✍ Scribed by Waclavek, Ján; Krausko, Gabriel; Škriniarová, Jaroslava

Publisher
John Wiley and Sons
Year
1998
Tongue
English
Weight
466 KB
Volume
26
Category
Article
ISSN
0142-2421

No coin nor oath required. For personal study only.

✦ Synopsis

Optical in situ monitoring, exploiting the interference of monochromatic radiation reÑected from the surface being chemically etched and from the deeper interfaces of semiconductor layers, was utilized to monitor the etch process of layered AlGaAs/AlAs/GaAs structures. The described method is applicable in controlled etching of heterostructures in order to terminate the etch process precisely and it is also suitable for analysis and diagnostics of epitaxially grown layers and for calibration of etch rates.

📜 SIMILAR VOLUMES

ChemInform Abstract: Wet Chemical Digita
ChemInform Abstract: Wet Chemical Digital Etching of GaAs at Room Temperature.
✍ G. C. DESALVO; C. A. BOZADA; J. L. EBEL; D. C. LOOK; J. P. BARRETTE; C. L. A. CE 📂 Article 📅 2010 🏛 John Wiley and Sons ⚖ 29 KB 👁 1 views

Wet Chemical Digital Etching of GaAs at Room Temperature. -The new title technique uses H2O2 to form an GaAs oxide layer in a self-limiting process at a constant layer thickness of ≈ 15 . ANG. for soak times from 15 to 120 s. In a second step the oxide layer is removed by an acid (e.g. HCl) without