## Abstract A new class of defects characterized by inherent non‐exponential capture and emission processes was observed. A theory – based on the potential barrier model – is proposed to describe the measured DLTS and capacitance transient data. It is argued that these defects are related to disloc
✦ LIBER ✦
Irradiation Induced Defects in III–V Semiconductor Compounds
✍ Scribed by Bourgoin, J. C. ;von Bardeleben, H. J. ;Stievenard, D.
- Publisher
- John Wiley and Sons
- Year
- 1987
- Tongue
- English
- Weight
- 1008 KB
- Volume
- 102
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Extended defects in III-V semiconductor
✍
Dr. G. Ferenczi; L. Dózsa
📂
Article
📅
1981
🏛
John Wiley and Sons
🌐
English
⚖ 315 KB
👁 1 views
Defects in III–V semiconductor surfaces
✍
Ph. Ebert
📂
Article
📅
2002
🏛
Springer
🌐
English
⚖ 433 KB
Defects in amorphous III-V compounds
✍
Marie-Luce Theye; Adriana Gheorghiu
📂
Article
📅
1982
🏛
Elsevier Science
⚖ 568 KB
Nonstoichiometry and defects in III–V co
✍
Vladimir P. Zlomanov
📂
Article
📅
2003
🏛
Elsevier Science
🌐
English
⚖ 185 KB
The deviation from stoichiometry or nonstoichiometry characterises a homogeneity range of chemical compounds. It is determined as the difference in the nonmetal-to metal atoms ratio between a real A n B mþd (d > o0) and stoichiometric A n B m composition. Nonstoichiometry creates defects which have
Theory of intrinsic defects in III–V sem
✍
T.L. Reinecke; P.J. Lin-Chung
📂
Article
📅
1981
🏛
Elsevier Science
🌐
English
⚖ 226 KB
ODMR of stoichiometry defects in III–V s
✍
J.-M. Spaeth; M. Fockele; K. Krambrock
📂
Article
📅
1992
🏛
Elsevier Science
🌐
English
⚖ 767 KB