Defect characterization of 4H-SiC wafers for power electronic device applications
β Scribed by Ferrero, S; Porro, S; Giorgis, F; Pirri, C F; Mandracci, P; Ricciardi, C; Scaltrito, L; Sgorlon, C; Richieri, G; Merlin, L
- Book ID
- 120185745
- Publisher
- Institute of Physics
- Year
- 2002
- Tongue
- English
- Weight
- 714 KB
- Volume
- 14
- Category
- Article
- ISSN
- 0953-8984
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
The purpose of this workshop is to spread the vast amount of information available on semiconductor physics to every possible field throughout the scientific community. As a result, the latest findings, research and discoveries can be quickly disseminated. This workshop provides all participating re
We have employed computer-aided furnace design and process simulation to optimize the conditions under which single-walled carbon nanotubes (SWCNTs) may be grown in high yields on 4 in. wafers for electronic device applications. Hydrokinetic simulations were performed to obtain optimized furnace str