Computer-aided design and growth of single-walled carbon nanotubes on 4 in. wafers for electronic device applications
✍ Scribed by Serin Park; Sohee Park; Hye-Mi So; Eun-Kyoung Jeon; Dong-Won Park; Ju-Jin Kim; Beom Soo Kim; Ki-jeong Kong; Hyunju Chang; Jeong-O. Lee
- Book ID
- 104009088
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 992 KB
- Volume
- 48
- Category
- Article
- ISSN
- 0008-6223
No coin nor oath required. For personal study only.
✦ Synopsis
We have employed computer-aided furnace design and process simulation to optimize the conditions under which single-walled carbon nanotubes (SWCNTs) may be grown in high yields on 4 in. wafers for electronic device applications. Hydrokinetic simulations were performed to obtain optimized furnace structures and process conditions in terms of gas flow, temperature, and gas speed. Shower head structures and a flow isolation barrier were installed in an experimental 6 in. furnace, as suggested by the hydrokinetic simulations.
To ensure clean surfaces and uniform catalyst islands, catalyst patterns were lifted off using Au films or polydimethylsiloxane. Photolithography was used to fabricate field-effect transistors with SWCNTs grown on 4 in. wafer substrates. The total yield of the nanotube devices increased from 30.5% to 96.4% after optimization.