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Deep-level trapping centers in heterostructures for GaN field-effect transistors

✍ Scribed by M. S. Andreev; L. E. Velikovskii; T. S. Kitichenko; T. G. Kolesnikova; A. P. Korovin; V. G. Mokerov; S. N. Yakunin


Book ID
111451508
Publisher
SP MAIK Nauka/Interperiodica
Year
2007
Tongue
English
Weight
257 KB
Volume
52
Category
Article
ISSN
1064-2269

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Refractive index changes in AlGaN/GaN he
✍ I. Saidi; L. BouzaΓ―ene; H. Mejri; H. Maaref πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 254 KB

Using the envelope wavefunction approximation and the compact density matrix formalism, we have investigated theoretically the linear and nonlinear refractive index changes in AlGaN/GaN quantum well heterostructures aimed for designing electro-optical modulators. The confining potential in the heter