✦ LIBER ✦

Deep level transient spectroscopy studies at low temperature of In0.52Al0.48As epilayers

✍ Scribed by R. Ajjel; M. Baira; J. Hellara; H. Maaref; B. Salem; G. Brémond; M. Gendry

Book ID: 108239531
Publisher: Elsevier Science
Year: 2007
Tongue: English
Weight: 192 KB
Volume: 391
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2006.08.042

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Photo-induced current transient spectros

Photo-induced current transient spectroscopy of Al0.48In0.52As semi-insulating layers grown on InP by molecular beam epitaxy

✍ A. Kalbousi; G. Marrakchi; A. Tabata; G. Guillot; G. Halkias; K. Zekentes; A. Ge 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 361 KB

Electric field dependence of allowed and

Electric field dependence of allowed and forbidden transitions in In0.53Ga0.47As/In0.52Al0.48As single quantum wells by room temperature modulation spectroscopy

✍ A. Dimoulas; J. Leng; K.P. Giapis; A. Georgakilas; G. Halkias; A. Christou 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 329 KB

Optical and structural properties of mol

Optical and structural properties of molecular-beam epitaxially grown Ga0.47In0.53As/Al0.48In0.52As superlattices, emitting at 1.55 μm at room temperature

✍ W. Stolz; L. Tapfer; A. Breitschwerdt; K. Ploog 📂 Article 📅 1985 🏛 Springer 🌐 English ⚖ 890 KB

Iron diffusivity measurement with deep-l

Iron diffusivity measurement with deep-level transient spectroscopy at room temperature

✍ K. Ryoo; R.K. Graupner 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 382 KB

Abstrael ## Time dependence of iron interstitial concentration changes in p-type silicon wa]ers was measured with deep-level transient spectroscopy. A slab diffitsion model was applied to the iron-to-FeB trans-,[ormation in order to cah'ulate the room lemperamre diffhsion coefficient of iron. It wa

Characterization of deep level defects i

Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy

✍ M. Asghar; F. Iqbal; S. Faraz; V. Jokubavicius; Q. Wahab; M. Syväjärvi 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 195 KB

Deep-level transient spectroscopy studie

Deep-level transient spectroscopy studies of U-irradiated silicon

✍ P. Mary; P. Bogdanski; M. Toulemonde; R. Spohr; J. Vetter 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 240 KB