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Optical and structural properties of molecular-beam epitaxially grown Ga0.47In0.53As/Al0.48In0.52As superlattices, emitting at 1.55 μm at room temperature

✍ Scribed by W. Stolz; L. Tapfer; A. Breitschwerdt; K. Ploog

Publisher
Springer
Year
1985
Tongue
English
Weight
890 KB
Volume
38
Category
Article
ISSN
1432-0630

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In0.53Ga0.47As>In0.52Al0.48As quantum wi
In0.53Ga0.47As>In0.52Al0.48As quantum wire structures grown on (775)B-oriented InP substrates by molecular beam epitaxy
✍ S. Hiyamizu; Y. Ohno; S. Shimomura 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 423 KB

Self-organized In,,,Ga,,,As/ In,,&.& quantum wire (QWR) structures were formed on (775)B InP substrates by molecular beam epitaxy (MBE) which showed good one-dimensionality (the polarization degree P [ = (I,, -I, )/(I,,+ I, )] as large as 0.2) and long emitting wavelengths in the range of 1.2 um at