Iron diffusivity measurement with deep-level transient spectroscopy at room temperature

✍ Scribed by K. Ryoo; R.K. Graupner

• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 382 KB
• Volume: 4
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(89)90251-1

✦ Synopsis

Abstrael

Time dependence of iron interstitial concentration changes in p-type silicon wa]ers was measured with deep-level transient spectroscopy. A slab diffitsion model was applied to the iron-to-FeB trans-,[ormation in order to cah'ulate the room lemperamre diffhsion coefficient of iron. It was very clos'e to the extrapolated value obtained from high temperature iron dij~s'ivi~ and some room temperature diffusion data obtained by the electron paramagnetic resonance or by resistivity change measurements. 7he effects of oxygen and its" precipitation on iron diffusion was considered, by comparing floating-zone wafers" with Czochralski

wafers" of various oxygen contents'. It was observed that these variables do not qff'ect iron diffusivity at room temperature. It was als'o noted that there was no dependence of the substrate resistivity on the iron diffusivity at tvom temperature. From thes'e results' it is concluded that the apparent iron diffitsion is mostly caused by the random walk of iron atoms.