CVD TiN layers as diffusion barrier films on porous SiO2 aerogel

✍ Scribed by J Bonitz; S.E Schulz; T Gessner

• Book ID: 104305992
• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 351 KB
• Volume: 70
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(03)00431-3

✦ Synopsis

In this work the compatibility of MOCVD TiN barrier films on porous SiO aerogel as low-k dielectric was investigated.

2

The continuity, roughness, and sheet resistance, R , of the barrier as well as the electrical properties of the aerogel were s investigated. A continuous TiN barrier on uncapped and PECVD SiN capped aerogel exists at 30 and #20 nm, respectively. The high surface roughness of the TiN is caused by the aerogel layer. TiN penetration into uncapped aerogel was detected in the interface region, whereas capped low-k material shows no interaction with the barrier film.