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CVD silicon oxynitride film process

โœ Scribed by Marten Terpstra


Book ID
103267368
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
73 KB
Volume
23
Category
Article
ISSN
0026-2692

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Thin nanocrystalline silicon oxynitride films were synthesized for the first time at low temperatures (373-750 K) by inductively coupled plasma chemical vapor deposition (ICP-CVD) using gas mixture of oxygen and hexamethyldisilazane Si 2 NH(CH 3 ) 6 (HMDS) as precursors. Single crystal Si (1 0 0) wa