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Properties of thin LPCVD silicon oxynitride films

✍ Scribed by P. Pan; J. Abernathey; C. Schaefer

Book ID: 112814201
Publisher: Springer US
Year: 1985
Tongue: English
Weight: 515 KB
Volume: 14
Category: Article
ISSN: 0361-5235
DOI: 10.1007/bf02654028

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## Abstract The influence of nitrogen on the internal structure and so on the electrical properties of silicon thin films obtained by low‐pressure chemical vapor deposition (LPCVD) was studied using several investigation methods. We found by using Raman spectroscopy and SEM observations that a stro