Current-voltage characteristics of Si/Si1 −xGexheterodiodes fabricated by direct bonding

✍ Scribed by I. V. Grekhov; E. I. Belyakova; L. S. Kostina; A. V. Rozhkov; Sh. A. Yusupova; L. M. Sorokin; T. S. Argunova; N. V. Abrosimov; N. A. Matchanov; J. H. Je

• Book ID: 111450229
• Publisher: SP MAIK Nauka/Interperiodica
• Year: 2008
• Tongue: English
• Weight: 338 KB
• Volume: 34
• Category: Article
• ISSN: 1063-7850
• DOI: 10.1134/s1063785008120110