Room temperature GaAsξΈSi and InPξΈSi wafe
Room temperature GaAsξΈSi and InPξΈSi wafer direct bonding by the surface activated bonding method
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Taek Ryong Chung; Liu Yang; Naoe Hosoda; Tadatomo Suga
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Article
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1997
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Elsevier Science
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English
β 335 KB