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Reverse recovery of Si/Si1 −xGexheterodiodes fabricated by direct bonding

✍ Scribed by I. V. Grekhov; E. I. Belyakova; L. S. Kostina; A. V. Rozhkov; T. S. Argunova; G. A. Oganesyan


Book ID
111451078
Publisher
SP MAIK Nauka/Interperiodica
Year
2011
Tongue
English
Weight
178 KB
Volume
37
Category
Article
ISSN
1063-7850

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Reproducible formation of well-controlled dislocation structures is a prerequisite to use dislocations as an active part of devices. Regular dislocation networks have been formed at the interface by Si wafer direct bonding. The barriers of interface were generally smaller than 100 meV. The temperatu