๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Cross-sectional transmission electron microscopy of silicon LSI circuits and josephson junction devices

โœ Scribed by Du, A. Y. ;Chu, Y. M.

Publisher
Wiley (John Wiley & Sons)
Year
1987
Tongue
English
Weight
429 KB
Volume
7
Category
Article
ISSN
0741-0581

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โœฆ Synopsis

Cross-sectional transmission electron microscopy (XTEM) has been used to diagnose silicon LSI circuits and Josephson junction devices. For LSI circuits, some typical failure problems have been presented. For Nb-Si-Nb Josephson junction, microholes in the thin silicon layer have observed, and they are responsible for the short circuiting of these devices.

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