The engineering of advanced heterostructure and nanoscale semiconductor devices has made essential a detailed understanding of, and control over, the structure and properties of semiconductor materials and devices at the atomic to nanometer scale. Cross-sectional scanning tunneling microscopy provid
Cross-sectional scanning tunneling microscopy on semiconductor heterostructures
β Scribed by M.B. Johnson; H.W.M. Salemink
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 457 KB
- Volume
- 24
- Category
- Article
- ISSN
- 0921-5107
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