The morphology and electronic properties of InAs quantum dots (QDs) on the GaAs(001) surface has been studied by ultrahigh vacuum scanning tunnelling microscopy/spectroscopy after removal of a preliminary deposited protective As layer. A thermal annealing procedure has been developed, which, applied
The Stoichiometry of InAs Quantum Dots Determined by Cross-Sectional Scanning Tunneling Microscopy
✍ Scribed by H. Eisele; O. Flebbe; T. Kalka; F. Heinrichsdorff; A. Krost; D. Bimberg; M. Dähne-Prietsch
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 204 KB
- Volume
- 215
- Category
- Article
- ISSN
- 0370-1972
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