𝔖 Bobbio Scriptorium
✦   LIBER   ✦

The Stoichiometry of InAs Quantum Dots Determined by Cross-Sectional Scanning Tunneling Microscopy

✍ Scribed by H. Eisele; O. Flebbe; T. Kalka; F. Heinrichsdorff; A. Krost; D. Bimberg; M. Dähne-Prietsch


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
204 KB
Volume
215
Category
Article
ISSN
0370-1972

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Ultrahigh vacuum scanning tunnelling mic
✍ Bolotov, L. N.; Nakamura, A.; Evtikhiev, V. P.; Tokranov, V. E.; Titkov, A. N. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 372 KB 👁 2 views

The morphology and electronic properties of InAs quantum dots (QDs) on the GaAs(001) surface has been studied by ultrahigh vacuum scanning tunnelling microscopy/spectroscopy after removal of a preliminary deposited protective As layer. A thermal annealing procedure has been developed, which, applied

Resonant Tunnelling through InAs Quantum
✍ J.-M. Meyer; I. Hapke-Wurst; U. Zeitler; R.J. Haug; K. Pierz 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 86 KB 👁 2 views

We have determined the Lande ´factor g \* in self-organized InAs quantum dots using resonant-tunnelling experiments. With the magnetic field applied parallel to the growth direction z we find g \* k ¼ 0:74 for the specific dot investigated. When the magnetic field is tilted away by J from the growth

Determination of the Se Atom Distributio
✍ Peter J. Schmidt; Gerhard Thiele; Myung-Hwan Whangbo 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 400 KB 👁 1 views

The layered compound Nb 3 (Se 1-x I x )I 7 is obtained when the I of the Se atoms in Nb 3 (Se 1-x I x )I 7 were examined by scanning tunneling microscopy. The analysis shows that the atoms at the face-capping sites of the layered compound Nb 3 I 8 are replaced by Se atoms. The amount and distributio