Cross-Sectional Scanning Tunneling Micro
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Kazama, T. ;Yasunaga, F. ;Taniyasu, Y. ;Jia, A. ;Kato, Y. ;Kobayashi, M. ;Yoshik
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Article
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2000
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John Wiley and Sons
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English
β 213 KB
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Atomic scale characterization of cleaved surfaces of cubic GaN (c-GaN) epilayers was established in real space. Using cross-sectional scanning tunneling microscopy (XSTM), c-GaN epilayers grown on GaAs (001) by low pressure MOVPE were investigated. The analysis of STM observations revealed that the