𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Critical thickness for growth of epitaxial grains in silicon film deposited on superlattice surface of silicon (111)

✍ Scribed by Kunisuke Maki; Yukichi Shigeta; Toshio Kuroda


Book ID
107790825
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
427 KB
Volume
115
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Incorporation behaviour of carbon and si
✍ J.M. Schneider; J. Ziegler; H. Heinecke πŸ“‚ Article πŸ“… 1997 πŸ› Elsevier Science 🌐 English βš– 445 KB

Silicon and carbontetrabromide were used as dopant sources in the growth of GaAs/GaAs and Gao.47Inf).s3As/ lnP structures. We studied the incorporation behaviour of these group IV atoms on (100) and {111} surfaces as a function of growth temperature. The free carrier concentrations determined by Hal