Crack-Free InGaN/GaN Light Emitters on Si(111)

✍ Scribed by Dadgar, A. ;Alam, A. ;Riemann, T. ;Bl�sing, J. ;Diez, A. ;Poschenrieder, M. ;Strassburg, M. ;Heuken, M. ;Christen, J. ;Krost, A.

• Publisher: John Wiley and Sons
• Year: 2001
• Tongue: English
• Weight: 1014 KB
• Volume: 188
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/1521-396x(200111)188:1<155::aid-pssa155>3.0.co;2-p

✦ Synopsis

We present MOCVD-grown crack-free GaN based light emitters on Si with a layer thickness of 3.6 mm. The crack free layer is grown on a thin predeposited GaN layer with fields defined by a Si x N y mask. In X-ray diffraction measurements a reduction in stress is observed for the patterned sample as compared to a similar unstructured sample. Lateral growth occurs at the edges of the fields with strongly differing growth rates for perpendicular directions. The impact of the facet type on the growth rate and impurity incorporation is observed by scanning electron microscopy and cathodoluminescence measurements. In electroluminescence the diode shows a bright blue emission at 421 nm.