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MOCVD-Grown InGaN/GaN MQW LEDs on Si(111)

✍ Scribed by M. Poschenrieder; K. Fehse; F. Schulz; J. Bläsing; H. Witte; A. Krtschil; A. Dadgar; A. Diez; J. Christen; A. Krost


Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
172 KB
Volume
0
Category
Article
ISSN
1862-6351

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Crack-Free InGaN/GaN Light Emitters on S
✍ Dadgar, A. ;Alam, A. ;Riemann, T. ;Bl�sing, J. ;Diez, A. ;Poschenrieder, M. ;Str 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 1014 KB

We present MOCVD-grown crack-free GaN based light emitters on Si with a layer thickness of 3.6 mm. The crack free layer is grown on a thin predeposited GaN layer with fields defined by a Si x N y mask. In X-ray diffraction measurements a reduction in stress is observed for the patterned sample as co