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Bright, Crack-Free InGaN/GaN Light Emitters on Si(111)

✍ Scribed by Dadgar, A. ;Poschenrieder, M. ;Contreras, O. ;Christen, J. ;Fehse, K. ;Bl�sing, J. ;Diez, A. ;Schulze, F. ;Riemann, T. ;Ponce, F.A. ;Krost, A.


Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
475 KB
Volume
192
Category
Article
ISSN
0031-8965

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Crack-Free InGaN/GaN Light Emitters on S
✍ Dadgar, A. ;Alam, A. ;Riemann, T. ;Bl�sing, J. ;Diez, A. ;Poschenrieder, M. ;Str 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 1014 KB

We present MOCVD-grown crack-free GaN based light emitters on Si with a layer thickness of 3.6 mm. The crack free layer is grown on a thin predeposited GaN layer with fields defined by a Si x N y mask. In X-ray diffraction measurements a reduction in stress is observed for the patterned sample as co