Crack-Free InGaN/GaN Light Emitters on S
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Dadgar, A. ;Alam, A. ;Riemann, T. ;BlοΏ½sing, J. ;Diez, A. ;Poschenrieder, M. ;Str
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Article
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2001
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John Wiley and Sons
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English
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We present MOCVD-grown crack-free GaN based light emitters on Si with a layer thickness of 3.6 mm. The crack free layer is grown on a thin predeposited GaN layer with fields defined by a Si x N y mask. In X-ray diffraction measurements a reduction in stress is observed for the patterned sample as co