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Copper-related deep level defects in III–V semiconductors

✍ Scribed by Kullendorff, N.; Jansson, L.; Ledebo, L-Å.


Book ID
121295222
Publisher
American Institute of Physics
Year
1983
Tongue
English
Weight
898 KB
Volume
54
Category
Article
ISSN
0021-8979

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Application of deep-level transient spec
✍ P. Kamiński 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 272 KB

Deep-level transient spectroscopy has been employed for monitoring grown-in point defects in vapour phase epitaxial GaAs06P0.4:Te and GaP:N,S. It is shown that the concentrations of deep electron traps T1 (0.20 eV) and T2 (0.18 eV) in GaA%.tP0.4:Te are dependent on the shallow donor concentration an