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Absolute Pressure Derivatives of Deep Level Defects in III-V Semiconductors

โœ Scribed by Nolte, D. D.; Walukiewicz, W.; Hailer, E. E.


Book ID
118184140
Publisher
Cambridge University Press
Year
1987
Weight
353 KB
Volume
104
Category
Article
ISSN
0272-9172

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Deep-level transient spectroscopy has been employed for monitoring grown-in point defects in vapour phase epitaxial GaAs06P0.4:Te and GaP:N,S. It is shown that the concentrations of deep electron traps T1 (0.20 eV) and T2 (0.18 eV) in GaA%.tP0.4:Te are dependent on the shallow donor concentration an