Copper Oxide Thin Films Prepared from Copper Dipivaloylmethanate and Oxygen by Chemical Vapor Deposition
β Scribed by Maruyama, Toshiro
- Book ID
- 127158739
- Publisher
- Institute of Pure and Applied Physics
- Year
- 1998
- Tongue
- English
- Weight
- 513 KB
- Volume
- 37
- Category
- Article
- ISSN
- 0021-4922
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Copper thin films were prepared by a low-temperature atmospheric-pressure chemical vapour deposition method. The raw material was copper dipivalylmethanate which is volatile and thermally stable. At a reaction temperature above 220 ~ polycrystalline copper films can be obtained by hydrogen reduction
Copper thin films were prepared by a low-temperature atmospheric pressure chemical vapour deposition method. The raw material was copper (11) acetylacetonate. At a reaction temperature above 220 ~ polycrystalline copper films can be obtained by hydrogen reduction of the raw material. The resistivity
## Abstract Cu~2~O thin films were grown on sapphire (0001) and MgO (100) substrates by chemical vapor deposition. The crystalline, vibrational and electrical properties of the layers and the amount of incorporated background impurities have been examined. Xβray diffraction measurements revealed, t