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Copper impurity levels in silicon : Naotake Toyama. Solid-St. Electron.26 (1), 37 (1983)

Publisher: Elsevier Science
Year: 1983
Tongue: English
Weight: 135 KB
Volume: 23
Category: Article
ISSN: 0026-2714
DOI: 10.1016/0026-2714(83)91126-5

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