Be ions were implanted into degenerately Si-doped GaAs at 300 keV to a dose of 10 15 cm Γ2 . The region near the projected range remained crystalline, and subthreshold defects formed at this depth after annealing at 450-500 C. The defects are identified as circular prismatic perfect interstitial loo
Contribution to the Si doping of bridgeman GaAs
β Scribed by W. Siegel; Dr. sc. nat. H. Boudriot; H. Koi; K. Deus; O. Oettel; H. A. Schneider
- Publisher
- John Wiley and Sons
- Year
- 1989
- Tongue
- English
- Weight
- 255 KB
- Volume
- 24
- Category
- Article
- ISSN
- 0232-1300
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