Electron-induced dissociation of SiH complexes in hydrogenated Si-doped GaAs. Application to the fabrication of microstructures
✍ Scribed by S. Silvestre; E. Constant; D. Bernard-Loridant; M. Constant; J. Chevallier
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 301 KB
- Volume
- 27
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
We study the role of hot electron injection in the dissociation of the SiH complexes which appear in n-type Si-doped GaAs epilayer exposed to a hydrogen or deuterium plasma. Firstly, the results recently obtained in room-temperature aging experiments on hydrogenated or deuterated Schottky diodes submitted to high bias voltage are summarized and the role of hot carriers in the dissociation of donors and the observed isotope effect are described. Then, it is shown that SiH dissociation can also be achieved using hot carriers injected into the semiconductor by electron beam. Such electron-beam effects are finally used for the fabrication and characterization by cathodoluminescence of micronic conductive GaAs structures.