## Abstract The depth resolution in Auger inβdepth profiles of TiN thin films on smooth Si substrates is determined by the evolution of a sputterβinduced surface roughness. It is shown that this effect depends critically on the ion angle of incidence. Therefore, the depth resolution can be improved
β¦ LIBER β¦
Concentration and depth profiles of elements in SixNyHz/Si thin films produced by PECVD
β Scribed by G. Murillo; E. Andrade; J.C. Alonso; L. Acosta; M.F. Rocha; E.P. Zavala; R. Policroniades
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 210 KB
- Volume
- 249
- Category
- Article
- ISSN
- 0168-583X
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