Stoichiometry reversal and depth-profiling in the growth of thin oxynitride films with N2O on Si(100) surfaces

✍ Scribed by D.G.J. Sutherland; H. Akatsu; M. Copel; F.J. Himpsel; T. Callcott; J.A. Carlisle; D. Ederer; J.J. Jia; I. Jimenez; R. Perera; D.K. Shuh; L.J. Terminello; W.M. Tong

• Publisher: Elsevier Science
• Year: 1996
• Tongue: English
• Weight: 312 KB
• Volume: 80
• Category: Article
• ISSN: 0368-2048
• DOI: 10.1016/0368-2048(96)02940-4